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CYM1481 - (CYM1471 / CYM1481) 2048k X 8 SRAM Module

Download the CYM1481 datasheet PDF. This datasheet also covers the CYM1471 variant, as both devices belong to the same (cym1471 / cym1481) 2048k x 8 sram module family and are provided as variant models within a single manufacturer datasheet.

General Description

The CYM1471 and CYM1481 are high-performance 8-megabit and 16-megabit static RAM modules organized as 1024K words (1471) or 2048K words (1481) by 8 bits.

A 16 Pin Configuration SIP A19 VCC WE I/O2 I/O3 I/O0 A1 A2 A3 A4 GND I/O5 A10 A11 A5 A13 A14 1 2 3

Key Features

  • High-density 8-/16-megabit SRAM modules.
  • High-speed CMOS SRAMs.
  • Access time of 70 ns.
  • Low active power.
  • 605 mW (max. ), 2M x 8.
  • Double-sided SMD technology.
  • TTL-compatible inputs and outputs.
  • Small footprint SIP.
  • PCB layout area of 0.72 sq. in.
  • 2V data retention (L version) are constructed from eight (1471) or sixteen (1481) 128K x 8 SRAMs in plastic surface-mount packages on an epoxy laminate board with p.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CYM1471_CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
CYM1851V33 Static RAM Module Cypress

Other Datasheets by Cypress (now Infineon)

Part Number Description
CYM1441 256K x 8 Static RAM Module
CYM1464 512Kx8 Static RAM Module
CYM1465A 512K x 8 PDIP Static RAM
CYM1471 (CYM1471 / CYM1481) 2048k X 8 SRAM Module
CYM1821 16K x 32 Static RAM Module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1CY M14 81 fax id: 2006 www.DataSheet4U.com CYM1471 CYM1481 1024K x 8 SRAM Module 2048K x 8 SRAM Module Features • High-density 8-/16-megabit SRAM modules • High-speed CMOS SRAMs — Access time of 70 ns • Low active power — 605 mW (max.), 2M x 8 • Double-sided SMD technology • TTL-compatible inputs and outputs • Small footprint SIP — PCB layout area of 0.72 sq. in. • 2V data retention (L version) are constructed from eight (1471) or sixteen (1481) 128K x 8 SRAMs in plastic surface-mount packages on an epoxy laminate board with pins. On-board decoding selects one of the SRAMs from the high-order address lines, keeping the remaining devices in standby mode for minimum power consumption. An active LOW write enable signal (WE) controls the writing/reading operation of the memory.