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FM28V102A - 1-Mbit (64 K x 16) F-RAM Memory

General Description

Address inputs: The 16 address lines select one of 64K words in the F-RAM array.

A0 may be used for page mode read and write operations.

Write Enable: A write cycle begins when WE is asserted.

Key Features

  • Low-voltage operation: VDD = 2.0 V to 3.6 V Industrial temperature:.
  • 40 C to +85 C 44-pin thin small outline package (TSOP) Type II Restriction of hazardous substances (RoHS) compliant 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 64 K × 16.
  • Configurable as 128 K × 8 using UB and LB 14.
  • High-endurance 100 trillion (10 ) read/writes.
  • 151-year data retention (see the Data Retention and Endurance table).
  • NoDel.

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Other Datasheets by Cypress (now Infineon)

Part Number Description
FM28V100 1-Mbit (128 K x 8) F-RAM Memory
FM28V020 256-Kbit (32 K x 8) F-RAM Memory
FM28V202A 2-Mbit (128 K x 16) F-RAM Memory
FM22L16 4-Mbit (256K x 16) F-RAM Memory
FM22LD16 4-Mbit (256K x 16) F-RAM Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FM28V102A 1-Mbit (64 K × 16) F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features ■ ■ ■ ■ ■ Low-voltage operation: VDD = 2.0 V to 3.