Overview: S25FL128P
128-Mbit, 3.0 V Flash Memory This product is not recommended for new and current designs. For new and current designs, S25FL128S supersedes S25FL128P. This is the factory-recommended migration path. Please refer to the S25FL128S data sheet for specifications and ordering information. Distinctive Characteristics
Architectural Advantages
Single power supply operation – Full voltage range: 2.7V to 3.6V read and program operations
Memory Architecture – 128Mb uniform 256 KB sector product – 128Mb uniform 64 KB sector product
Program – Page Program (up to 256 bytes) in 1.5 ms (typical) – Faster program time in Accelerated Programming mode (8.5 V–9.5 V on #WP/ACC) in 1.2 ms (typical)
Erase – 2 s typical 256 KB sector erase time – 0.5 s typical 64 KB sector erase time – 128 s typical bulk erase time – Sector erase (SE) command (D8h) for 256 KB sectors; (20h or D8h) for 64KB sectors – Bulk erase command (C7h) for 256 KB sectors; (60h or C7h) for 64KB sectors
Cycling Endurance – 100,000 cycles per sector typical
Data Retention – 20 years typical
Device ID – RDID (9Fh), READ_ID (90h) and RES (ABh) commands to read manufacturer and device ID information – RES command one-byte electronic signature for backward compatibility Process Technology – Manufactured on 0.
