Datasheet Details
| Part number | CY62146G |
|---|---|
| Manufacturer | Cypress (now Infineon) |
| File Size | 578.01 KB |
| Description | 4-Mbit (256K words x 16 bit) Static RAM |
| Datasheet |
 CY62146G Datasheet
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General Description
CY62146G/CY62146GE and CY62146GSL/CY62146GESL are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC.
Both devices are offered in single and dual chip enable options and in multiple pin configurations.
Key Features
- High speed: 45 ns/55 ns.
- Ultra-low standby power.
- Typical standby current: 3.5 A.
- Maximum standby current: 8.7 A.
- Embedded ECC for single-bit error correction[1].
- Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V.
- 1.0-V data retention.
- TTL-compatible inputs and outputs.
- Error indication (ERR) pin to indicate 1-bit error detection and correction.
- Pb-free 48-ball VFBGA and 44-pin TSOP II packages Functional.