CY62146G Description
CY62146G/CY62146GE and CY62146GSL/CY62146GESL are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC. Both devices are offered in single and dual chip enable options and in multiple pin configurations. The CY62146GE/CY62146GESL device includes an ERR pin that signals an error-detection and correction event during a read cycle.
CY62146G Key Features
- High speed: 45 ns/55 ns
- Ultra-low standby power
- Typical standby current: 3.5 A
- Maximum standby current: 8.7 A
- Embedded ECC for single-bit error correction[1]
- Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V
- 1.0-V data retention
- TTL-patible inputs and outputs
- Error indication (ERR) pin to indicate 1-bit error detection and correction
- Pb-free 48-ball VFBGA and 44-pin TSOP II packages