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CY7C056V - Asynchronous Dual-Port Static RAM

Features

  • True dual-ported memory cells that allow simultaneous access of the same memory location.
  • 16 K × 36 organization (CY7C056V).
  • 32 K × 36 organization (CY7C057V).
  • 0.25-micron Complimentary metal oxide semiconductor (CMOS) for optimum speed/power.
  • High-speed access: 12/15 ns.
  • Low operating power.
  • Active: ICC = 250 mA (typical).
  • Standby: ISB3 = 10 A (typical).
  • Fully asynchronous operation.
  • Automatic power-down.
  • Expandable data bus to 72 bits or.

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Other Datasheets by Cypress (Infineon)

Part Number Description
CY7C057V Asynchronous Dual-Port Static RAM
CY7C008 64K/128K x 8/9 Dual-Port Static RAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY7C056V CY7C057V CY7C037V CY7C038V3.3 V 16 K / 32 K × 36 FLEx36™ Asynchronous Dual-Port Static RAM CY7C056V CY7C057V 3.3 V 16 K / 32 K × 36 FLEx36™ Asynchronous Dual-Port Static RAM 3.3 V 16 K / 32 K × 36 FLEx36™ Asynchronous Dual-Port Static RAM Features ■ True dual-ported memory cells that allow simultaneous access of the same memory location ■ 16 K × 36 organization (CY7C056V) ■ 32 K × 36 organization (CY7C057V) ■ 0.
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