CY62126ESL Description
The CY62126ESL is a high performance CMOS static RAM organized as 64K words by 16 bits.
CY62126ESL Key Features
- Very high speed: 45 ns
- Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V
- Ultra low standby power
- Typical standby current: 1 A
- Maximum standby current: 4 A
- Ultra low active power
- Typical active current: 1.3 mA at f = 1 MHz
- Easy memory expansion with CE, and OE features
- Automatic power down when deselected
- plementary metal oxide semiconductor (CMOS) for optimum speed and power