• Part: BTA608A3
  • Description: PNP Transistor
  • Category: Transistor
  • Manufacturer: Cystech Electonics Corp
  • Size: 200.16 KB
Download BTA608A3 Datasheet PDF
Cystech Electonics Corp
BTA608A3
BTA608A3 is PNP Transistor manufactured by Cystech Electonics Corp.
Features - The BTA608A3 is designed for use in driver stage of AF amplifier and general purpose amplification. - High HFE and excellent linearity - Large current capability and wide SOA - plementary to BTC536A3 - Pb-free package Symbol Outline TO-92 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd RθJA Tj Tstg Limits -60 -50 -6 -150 -400 500 250 150 -55~+150 Unit V V V m A m A m W °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCEO BVCBO BVEBO ICBO IEBO - VCE(sat) VBE(sat) h FE 1 h FE 2 f T Cob Min. -50 -60 -6 160 70 Typ. 200 4.5 Max. -0.1 -0.1 -0.3 -1.0 560 Unit V V V µA µA V V MHz p F .. Spec. No. : C306A3-S Issued Date : 2005.09.29 Revised Date : Page No. : 2 / 5 Test Conditions IC=-1m A IC=-10µA IE=-10µA VCB=-40V VEB=-5V IC=-100m A, IB=-10m A IC=-100m A, IB=-10m A VCE=-6V, IC=-1m A VCE=-6V, IC=-0.1m A VCE=-6V, IC=-10m A VCB=-6V, f=1MHz - Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of h FE 1 Rank Range F 160~320 G 280~560 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current HFE@VCE=6V .. Spec. No. : C306A3-S Issued Date : 2005.09.29 Revised Date : Page No. : 3 / 5 Saturation Voltage vs Collector Current 1000 Saturation Voltage---(m...