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BTC4505A3 - NPN Transistor

Key Features

  • High breakdown voltage. (BVCEO = 400V).
  • Low saturation voltage, typically VCE(sat) = 0.1V at IC / IB=10mA / 1mA.
  • Complementary to BTA1759A3.
  • RoHS compliant package.
  • Pb-free lead plating package Spec. No. : C210A3-R Issued Date : 2003.10.15 Revised Date :2017.08.03 Page No. : 1/6 Symbol BTC4505A3 Outline TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cu.

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Datasheet Details

Part number BTC4505A3
Manufacturer Cystech Electonics Corp
File Size 388.04 KB
Description NPN Transistor
Datasheet download datasheet BTC4505A3 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTC4505A3 Features  High breakdown voltage. (BVCEO = 400V)  Low saturation voltage, typically VCE(sat) = 0.1V at IC / IB=10mA / 1mA.  Complementary to BTA1759A3  RoHS compliant package  Pb-free lead plating package Spec. No. : C210A3-R Issued Date : 2003.10.15 Revised Date :2017.08.03 Page No.