BTC4505M3 Description
CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTC4505M3 Spec. 2003.05.15 Revised Date :2014.07.24 Page No.
BTC4505M3 Key Features
- High breakdown voltage, BVCEO (min)=400V
- Low saturation voltage, typically VCE(sat) =0.14V at IC/IB=50mA/5mA
- plementary to BTA1759M3
- Pb-free lead plating and halogen-free package