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BTC4620T3 - NPN Transistor

Key Features

  • High breakdown voltage. (BVCEO =350V).
  • Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA.
  • Complementary to BTA1776T3 Symbol BTC4620T3 Outline TO-126 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Symbol V.

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Datasheet Details

Part number BTC4620T3
Manufacturer Cystech Electonics Corp
File Size 165.91 KB
Description NPN Transistor
Datasheet download datasheet BTC4620T3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor Spec. No. : C210T3 www.DataSheet4U.com Issued Date : 2004.07.01 Revised Date : 2004.07.22 Page No. : 1/4 BTC4620T3 Features • High breakdown voltage. (BVCEO =350V) • Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA. • Complementary to BTA1776T3 Symbol BTC4620T3 Outline TO-126 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limit 350 350 5 100 200 1.