BTC4620T3 Datasheet | Cystech Electonics Corp

Features - High breakdown voltage. (BVCEO =350V) - Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10m A/1m A. - plementary to BTA1776T3 Symbol Outline TO-126 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limit 350 350 5 100 200 1.2 7 150 -55~+150 Unit V V V m A W °C °C CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO - VCE(sat) - VBE(sat) h FE f T Cob Min. 350 350 5 80 Typ. 0.1 70 2.6 Max. 0.1 0.1 0.6 1 200 Unit V V V µA µA V V MHz p F Spec. No. : C210T3 .. Issued Date : 2004.07.01 Revised Date : 2004.07.22 Page No. : 2/4 Test Conditions IC=50µA, IE=0 IC=1m A, IB=0 IE=50µA, IC=0 VCB=200V, IE=0 VEB=4V, IC=0 IC=20m A, IB=2m A IC=20m A, IB=2m A VCE=10V, IC=10m A VCE=30V, IC=10m A, f=10MHz VCB=30V, f=1MHz - Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of h FE Rank Range P 80~140 Q 100~200 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(m V) 10000 Spec. No. : C210T3 .. Issued Date : 2004.07.01 Revised Date : 2004.07.22 Page No. : 3/4 Saturation Voltage vs Collector Current Current Gain---HFE VCE = 10V VCE(SAT) @ IC = 20IB VCE = 5V VCE = 1V VCE(SAT) @ IC = 10IB 1 1 10 100 Collector Current---IC(m A) 1000 10 1 10 Collector Current---IC(m A)...