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BTC4672M3 - NPN Transistor

Key Features

  • Low saturation voltage, typically VCE(sat)=0.1V at IC/IB=1A/50mA.
  • Excellent DC current gain characteristics.
  • Complementary to BTA1797M3.
  • Pb-free lead plating and halogen-free package Symbol BTC4672M3 Outline SOT-89 B：Base C：Collector E：Emitter BC E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Power Dissipa.

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Datasheet Details

Part number BTC4672M3
Manufacturer Cystech Electonics Corp
File Size 263.35 KB
Description NPN Transistor
Datasheet download datasheet BTC4672M3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTC4672M3 Spec. No. : C819M3 Issued Date : 2005.08.16 Revised Date :2016.12.06 Page No. : 1/6 Features • Low saturation voltage, typically VCE(sat)=0.1V at IC/IB=1A/50mA • Excellent DC current gain characteristics • Complementary to BTA1797M3 • Pb-free lead plating and halogen-free package Symbol BTC4672M3 Outline SOT-89 B：Base C：Collector E：Emitter BC E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Power Dissipation PD Junction Temperature Tj Storage Temperature Tstg Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm 2 .