BTD1664M3
BTD1664M3 is NPN Transistor manufactured by Cystech Electonics Corp.
Features
- The BTD1664M3 is designed for general purpose low frequency power amplifier applications.
- Low VCE(sat), VCE(sat)=0.15V (typical), at IC / IB = 400m A / 20m A
- plementary to BTB1132M3
- Pb-free lead plating and halogen-free package
Symbol
Outline
SOT-89
B:Base C:Collector E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse)
Power Dissipation
Junction Temperature and Storage Temperature Range
Note : 1. Single pulse, Pw = 20ms, duty ≤ 2%. 2. When mounted on a 40 ×40 ×0.7 mm ceramic board.
Symbol
VCBO VCEO VEBO
IC ICP
Tj ; Tstg
Limits
45 25 5 1.5 3 (Note 1) 0.5 2 (Note 2) -55~+150
Unit
V V V A A W W °C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C223M3 Issued Date : 2003.05.26 Revised Date :2013.08.07 Page No. : 2/8
Characteristics (Ta=25°C)
Symbol
BVCBO BVCEO BVEBO
ICBO IEBO
- VCE(sat)1
- VCE(sat)2
- VCE(sat)3
- RCE(sat)
- VBE(on)
- h FE1
- h FE2
- h FE3 f T...