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BTD1664M3 - NPN Transistor

Key Features

  • The BTD1664M3 is designed for general purpose low frequency power amplifier.

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Datasheet Details

Part number BTD1664M3
Manufacturer Cystech Electonics Corp
File Size 239.59 KB
Description NPN Transistor
Datasheet download datasheet BTD1664M3 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1664M3 BVCEO IC RCESAT Spec. No. : C223M3 Issued Date : 2003.05.26 Revised Date :2013.08.07 Page No. : 1/8 25V 1.5A 0.31Ω(typ.) Features • The BTD1664M3 is designed for general purpose low frequency power amplifier applications. • Low VCE(sat), VCE(sat)=0.15V (typical), at IC / IB = 400mA / 20mA • Complementary to BTB1132M3 • Pb-free lead plating and halogen-free package Symbol BTD1664M3 Outline SOT-89 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature and Storage Temperature Range Note : 1. Single pulse, Pw = 20ms, duty ≤ 2%.