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BTD1768BA3 - NPN Transistor

General Description

The BTD1768BA3 is designed for use in driver and output stages of AF amplifier and general purpose application.

Key Features

  • Low collector saturation voltage.
  • High breakdown voltage, VCEO=80V (min. ).
  • High collector current, IC(max)=1A (DC).
  • Pb-free package Symbol BTD1768BA3 Outline TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Sy.

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Datasheet Details

Part number BTD1768BA3
Manufacturer Cystech Electonics Corp
File Size 243.78 KB
Description NPN Transistor
Datasheet download datasheet BTD1768BA3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD1768BA3 Spec. No. : C304A3-B Issued Date : 2006.08.21 Revised Date :2010.07.02 Page No. : 1/6 Description The BTD1768BA3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features • Low collector saturation voltage • High breakdown voltage, VCEO=80V (min.