BTD2195J3 Datasheet | Cystech Electonics Corp

Description BVCEO IC RCESAT 120V 4A 600mΩ The BTD2195J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Ro HS pliant package process is adopted. Equivalent Circuit BTD2195J3 B Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : Single Pulse Pw≦350μs, Duty≦2%. Symbol VCBO VCEO VEBO IC ICP Pd(TA=25℃) Pd(TC=25℃) RθJA RθJC Tj Tstg Limits 130 120 5 4 6 (Note ) 1.5 20 83.3 150 -55~+150 Unit V V V A A W W °C/W °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2010.12.08 Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCEO BVCBO ICBO ICEO IEBO -...