BTA1210F3 Datasheet | Cystech Electonics

Description The BTA1210F3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features - High BVCEO - High DC current gain - High current capability - Monolithic construction with built-in base-emitter shunt resistors - Pb-free package Equivalent Circuit BTA1210F3 C B Outline TO-263 B：Base C：Collector E：Emitter CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : Single Pulse Pw≦350μs, Duty≦2%. Spec. No. : C656F3 .. Issued Date : 2007.02.02 Revised Date : Page No. : 2/5 Symbol VCBO VCEO VEBO IC ICP Pd(TA=25℃) Pd(TC=25℃) RθJA RθJC Tj Tstg Limits -120 -120 -5 -10 -15 (Note ) 2 60 62.5 2.08 150 -55~+150 Unit V V V A A W W °C/W °C/W °C °C Characteristics (Ta=25°C) Symbol BVCEO BVCBO BVEBO ICBO ICEO IEBO - VCE(sat) 1 - VCE(sat) 2 - VBE(sat) - VBE(on) - h FE1 - h FE2 Cob Min. -120 -120 -5 1 100 Typ. Max. -200 -200 -2 -1.25 -1.65 -2.5 -2.8 12 300 Unit V V V μA μA m A V V V V K p F Test Conditions IC=-1m A, IB=0 IC=-100μA, IE=0 IE=-1m A, IC=0 VCB=-120V, IE=0 VCE=-120V, IB=0 VEB=-5V, IC=0 IC=-4A, IB=-16m A IC=-8A, IB=-80m A IC=-8A, IB=-80m A VCE=-4V, IC=-4A VCE=-4V, IC=-4A VCE=-4V, IC=-8A VCB=-10V, IE=0A, f=1MHz - Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information Device BTA1210F3 Package TO-263 (Pb-free) Shipping 800 pcs / Tape & Reel Marking A1210 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current VCE=3V Spec. No. : C656F3 .. Issued Date : 2007.02.02 Revised Date : Page No. :...