BTA1210FP
BTA1210FP is PNP Epitaxial Planar Transistor manufactured by Cystech Electonics.
Description
..
The BTA1210FP is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application.
Features
- High BVCEO
- High DC current gain
- High current capability
- Monolithic construction with built-in base-emitter shunt resistors
- Pb-free package
Equivalent Circuit
BTA1210FP C B
Outline
TO-220FP
E B:Base C:Collector E:Emitter
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse)
.. Power Dissipation
Spec. No. : C656FP Issued Date : 2005.03.29 Revised Date : Page No. : 2/4
Symbol VCBO VCEO VEBO IC ICP Pd(TA=25℃) Pd(TC=25℃) RθJA RθJC Tj Tstg
Limits -120 -120 -5 -10 -15 (Note ) 2 60 62.5 2.08 150 -55~+150
Unit V V V A A W W °C/W °C/W °C °C
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Note : Single Pulse Pw≦350µs, Duty≦2%.
Characteristics (Ta=25°C)
Symbol BVCEO BVCBO BVEBO ICBO ICEO IEBO
- VCE(sat) 1
- VCE(sat) 2
- VBE(sat)
- VBE(on)
- h FE1
- h FE2 Cob Min. -120 -120 -5 1 100 Typ. Max. -200 -200 -2 -2 -4 -4.5 -2.8 12 300 Unit V V V µA µA m A V V V V K p F Test Conditions IC=-1m A, IB=0 IC=-100µA, IE=0 IE=-1m A, IC=0 VCB=-120V, IE=0 VCE=-120V, IB=0 VEB=-5V, IC=0 IC=-4A, IB=-16m A IC=-8A, IB=-80m A IC=-8A, IB=-80m A VCE=-4V, IC=-4A VCE=-4V, IC=-4A VCE=-4V, IC=-8A VCB=-10V, IE=0A, f=1MHz
- Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
VCE=3V...