BTA1210J3
BTA1210J3 is PNP Epitaxial Planar Transistor manufactured by Cystech Electonics.
Description
..
The BTA1210J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application.
Features
- High BVCEO
- High DC current gain
- High current capability
- Monolithic construction with built-in base-emitter shunt resistors
Equivalent Circuit
BTA1210J3 C B
Outline
TO-252
E B：Base C：Collector E：Emitter B C E
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse)
.. Power Dissipation
Spec. No. : C656J3 Issued Date : 2004.05.12 Revised Date : Page No. : 2/4
Symbol VCBO VCEO VEBO IC ICP Pd(TA=25℃) Pd(TC=25℃) RθJA RθJC Tj Tstg
Limits -120 -120 -5 -10 -15 (Note ) 1.75 20 83.3 6.25 150 -55~+150
Unit V V V A A W W °C/W °C/W °C °C
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Note : Single Pulse Pw≦350µs, Duty≦2%.
Characteristics (Ta=25°C)
Symbol BVCEO BVCBO BVEBO ICBO ICEO IEBO
- VCE(sat) 1
- VCE(sat) 2
- VBE(sat)
-...
