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BTB1243I3 - Low Vcesat PNP Epitaxial Planar Transistor

Key Features

  • Low VCE(sat), VCE(sat)=-0.2 V (typical), at IC / IB = -2A / -0.1A.
  • Excellent current gain characteristics www. DataSheet4U. com.
  • Complementary to BTD1864I3 Symbol BTB1243I3 Outline TO-251 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Note :.
  • 1. Single P.

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Datasheet Details

Part number BTB1243I3
Manufacturer Cystech Electonics
File Size 193.42 KB
Description Low Vcesat PNP Epitaxial Planar Transistor
Datasheet download datasheet BTB1243I3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C817I3 Issued Date : 2003.07.03 Revised Date : 2004.07.02 Page No. : 1/4 BTB1243I3 Features • Low VCE(sat), VCE(sat)=-0.2 V (typical), at IC / IB = -2A / -0.1A • Excellent current gain characteristics www.DataSheet4U.com • Complementary to BTD1864I3 Symbol BTB1243I3 Outline TO-251 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Note : *1.