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BTB1424L3 - Low VCE(sat) PNP Epitaxial Planar Transistor

Key Features

  • Excellent DC current gain characteristics.
  • Low Saturation Voltage VCE(sat)=-0.4V(typ) (IC=-2A, IB=-100mA).
  • Complementary to BTD2150L3 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed) (Note 1) Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Note : Single pulse, Pw≤10ms, Duty Cycle≤30%. Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits -5.

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Datasheet Details

Part number BTB1424L3
Manufacturer Cystech Electonics
File Size 209.50 KB
Description Low VCE(sat) PNP Epitaxial Planar Transistor
Datasheet download datasheet BTB1424L3 Datasheet

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www.DataSheet4U.com CYStech Electronics Corp. Spec. No. : C817L3 Issued Date : 2003.07.31 Revised Date :2004.12.15 Page No. : 1/3 Low VCE(sat) PNP Epitaxial Planar Transistor BTB1424L3 Features • Excellent DC current gain characteristics • Low Saturation Voltage VCE(sat)=-0.4V(typ) (IC=-2A, IB=-100mA). •Complementary to BTD2150L3 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed) (Note 1) Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Note : Single pulse, Pw≤10ms, Duty Cycle≤30%.