Datasheet4U Logo Datasheet4U.com

BTB1424N3 - Low VCE(sat) PNP Epitaxial Planar Transistor

Key Features

  • Excellent DC current gain characteristics.
  • Low Saturation Voltage VCE(sat)=-0.3V(typ)(IC=-2A, IB=-100mA).
  • Complementary to BTD2150N3.
  • Pb-free package Symbol BTB1424N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed)(Note 1) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperatu.

📥 Download Datasheet

Datasheet Details

Part number BTB1424N3
Manufacturer Cystech Electonics
File Size 355.15 KB
Description Low VCE(sat) PNP Epitaxial Planar Transistor
Datasheet download datasheet BTB1424N3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BTB1424A3 PNP Transistor CYStech
BTB1424AT3 PNP Transistor CYStech
BTB1424FP PNP Transistor CYStech
BTB1427M3 PNP Transistor Cystech Electonics Corp
BTB1498N3 PNP Transistor CYStech

Other Datasheets by Cystech Electonics

Part Number Description
BTB1424AD3 Low VCE(sat) PNP Epitaxial Planar Transistor
BTB1424AM3 Low VCE(sat) PNP Epitaxial Planar Transistor
BTB1424L3 Low VCE(sat) PNP Epitaxial Planar Transistor
BTB1424LN3 Low VCE(sat) PNP Epitaxial Planar Transistor
BTB1426A3 Low VCE(SAT) PNP Epitaxial Planar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com CYStech Electronics Corp. Spec. No. : C817N3-R Issued Date : 2003.04.03 Revised Date :2004.09.30 Page No. : 1/5 Low VCE(sat) PNP Epitaxial Planar Transistor BTB1424N3 Features • Excellent DC current gain characteristics • Low Saturation Voltage VCE(sat)=-0.3V(typ)(IC=-2A, IB=-100mA). • Complementary to BTD2150N3 • Pb-free package Symbol BTB1424N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed)(Note 1) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Note 1: Single pulse, Pw≤10ms, Duty Cycle≤30%.