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BTB1426A3 - Low VCE(SAT) PNP Epitaxial Planar Transistor

General Description

The BTB1426A3 is designed especially for use in strobo flash and medium power amplifier applications.

High DC current gain and excellent hFE linearity.

Low Saturation Voltage VCE(sat)=-0.5V(max)(IC=-2A, IB=-100mA).

Key Features

  • Symbol BTB1426A3 Outline TO-92 B:Base C:Collector E:Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed)(Note 1) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Note : Single pulse, Pw≤10ms, Duty Cycle≤2%. Symbol VCBO VCEO VEBO IC ICP Pd RθJA Tj Tstg Limits -20 -20 -6 -3 -5 (Note ) 750 167 150 -55~+150 Unit V V V A mW.

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Datasheet Details

Part number BTB1426A3
Manufacturer Cystech Electonics
File Size 185.59 KB
Description Low VCE(SAT) PNP Epitaxial Planar Transistor
Datasheet download datasheet BTB1426A3 Datasheet

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www.DataSheet4U.com CYStech Electronics Corp. Spec. No. : C816A3-H Issued Date : 2003.07.02 Revised Date : Page No. : 1/4 Low VCE(SAT) PNP Epitaxial Planar Transistor BTB1426A3 Description The BTB1426A3 is designed especially for use in strobo flash and medium power amplifier applications. • High DC current gain and excellent hFE linearity. • Low Saturation Voltage VCE(sat)=-0.5V(max)(IC=-2A, IB=-100mA).