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BTB1424LN3 - Low VCE(sat) PNP Epitaxial Planar Transistor

Key Features

  • Low VCE(sat), typically -0.3 V at IC / IB = -2A / -0.2A.
  • Excellent current gain characteristics.
  • Complementary to BTD2150LN3 Symbol BTB1424LN3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Note : Single Puls.

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Datasheet Details

Part number BTB1424LN3
Manufacturer Cystech Electonics
File Size 193.67 KB
Description Low VCE(sat) PNP Epitaxial Planar Transistor
Datasheet download datasheet BTB1424LN3 Datasheet

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www.DataSheet4U.com CYStech Electronics Corp. Spec. No. : C817N3 Issued Date : 2003.06.17 Revised Date:2004.07.01 Page:1/4 Low VCE(sat) PNP Epitaxial Planar Transistor BTB1424LN3 Features • Low VCE(sat), typically -0.3 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Complementary to BTD2150LN3 Symbol BTB1424LN3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Note : Single Pulse Pw≦350µs, Duty≦2%.