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BTB1412J3 - Low Vcesat PNP Epitaxial Planar Transistor

Key Features

  • Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A.
  • Excellent DC current gain characteristics.
  • Complementary to BTD2118J3 Symbol BTB1412J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note :.
  • 1. Single Pulse Pw=10ms Symbol VCBO VCEO VEBO IC(DC) IC(Pu.

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Datasheet Details

Part number BTB1412J3
Manufacturer Cystech Electonics
File Size 212.77 KB
Description Low Vcesat PNP Epitaxial Planar Transistor
Datasheet download datasheet BTB1412J3 Datasheet

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www.DataSheet4U.com CYStech Electronics Corp. Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2004.07.02 Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB1412J3 Features • Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A • Excellent DC current gain characteristics • Complementary to BTD2118J3 Symbol BTB1412J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1.