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BTD2097LI3 - NPN Epitaxial Planar Transistor

Key Features

  • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A.
  • Excellent DC current gain characteristics www. DataSheet4U. com.
  • Complementary to BTB1326LI3 Symbol BTD2097LI3 Outline TO-251 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Note : 1. Single Pul.

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Datasheet Details

Part number BTD2097LI3
Manufacturer Cystech Electonics
File Size 180.61 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD2097LI3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C850I3 Issued Date : 2004.02.27 Revised Date : Page No. : 1/4 BTD2097LI3 Features • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics www.DataSheet4U.com • Complementary to BTB1326LI3 Symbol BTD2097LI3 Outline TO-251 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Note : 1. Single Pulse Pw≦350µs, Duty≦2%.