BTD2098LM3
BTD2098LM3 is NPN Epitaxial Planar Transistor manufactured by Cystech Electonics.
Features
- Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A
- Excellent DC current gain characteristics ..
- plementary to BTB1386LM3
- Pb-free package
Symbol
Outline
SOT-89
B:Base C:Collector E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Symbol VCBO VCEO VEBO IC ICP Pd Limits 40 15 6 5 8 (Note 1 ) 0.6 1 (Note 2) 2 (Note 3) 208 125 (Note 2) 62.5 (Note 3) 150 -55~+150 Unit V V V A A W W W °C/W °C/W °C/W °C °C
Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature
RθJA Tj Tstg
Note : 1. Single Pulse Pw≦350µs, Duty≦2%. 2.When mounted on FR-4 PCB with area measuring 10×10×1 mm. 3. When mounted on ceramic with area measuring 40×40×1 mm
BTD2098LM3 CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO
- VCE(sat) ..
- h FE1
- h FE2 f T Cob Min. 40 15 6 180 160 Typ. 0.25 150 Max. 0.1 0.1 0.5 820 50 Unit V V V µA µA V MHz p F
Spec. No. : C850M3 Issued Date : 2004.02.27 Revised Date :2005.10.04 Page No. : 2/5
Test Conditions IC=50µA, IB=0 IC=1m A, IB=0 IE=50µA, IC=0 VCB=40V, IE=0 VEB=5V,IC=0 IC=3A, IB=0.1A VCE=2V, IC=500m A VCE=2V, IC=2A VCE=6V, IC=50m A, f=200MHz VCB=20V, IE=0A, f=1MHz
- Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of h FE1
Rank Range R 180~390 S 270~560 T 390~820
Ordering Information
Device BTD2098LM3 Package SOT-89 (Pb-free) Shipping 1000 pcs / Tape & Reel Marking AH
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000 1000 VCE(SAT) Current Gain---HFE
VCE=5V
Spec. No. : C850M3 Issued Date : 2004.02.27 Revised Date :2005.10.04 Page No. : 3/5
Saturation Voltage vs Collector Current
Saturation Voltage---(m V)
IC=100IB...