The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C850M3 Issued Date : 2004.02.27 Revised Date :2005.10.04 Page No. : 1/5
BTD2098LM3
Features
• Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics www.DataSheet4U.com • Complementary to BTB1386LM3 • Pb-free package
Symbol
BTD2098LM3
Outline
SOT-89
B:Base C:Collector E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Symbol VCBO VCEO VEBO IC ICP Pd Limits 40 15 6 5 8 (Note 1 ) 0.6 1 (Note 2) 2 (Note 3) 208 125 (Note 2) 62.