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BTD2098M3 - NPN Epitaxial Planar Transistor

Key Features

  • Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A.
  • Excellent DC current gain characteristics.
  • Complementary to BTB1386M3.
  • Pb-free lead plating and halogen-free package Symbol BTD2098M3 Outline SOT-89 B:Base C:Collector E:Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal resistance, junction.

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Datasheet Details

Part number BTD2098M3
Manufacturer Cystech Electonics
File Size 288.34 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD2098M3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2098M3 Spec. No. : C847M3 Issued Date : 2003.04.17 Revised Date :2014.10.16 Page No. : 1/6 Features • Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.