BTD2098M3 Datasheet | Cystech Electonics

Features - Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A - Excellent DC current gain characteristics - plementary to BTB1386M3 - Pb-free lead plating and halogen-free package Symbol Outline SOT-89 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal resistance, junction to ambient Thermal resistance, junction to case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd RθJA RθJC Tj Tstg Limits 40 30 6 5 8 0.6 1 2 125 62.5 16 150 -55~+150 - 1 - 2 - 3 - 2 - 3 Note : - 1 Single pulse , Pw=10ms - 2 Printed circuit board, glass epoxy board, 1.7mm thick with collector copper plating 10mm- 10mm. - 3 When mounted on a 40- 40- 0.7mm ceramic board. Unit V V V A A °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C847M3 Issued Date : 2003.04.17 Revised Date :2014.10.16 Page No. : 2/6 Ordering Information Device BTD2098M3-S-T2-G Package...