BTN6517N3 Datasheet | Cystech Electonics

Features - High Breakdown Voltage:BVCEO≥350V - plementary to BTP6520N3 Symbol BTN6517N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current---continuous Power Dissipation @TA=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 350 350 6 500 225 150 -55~+150 Unit V V V m A m W °C °C CYStek Product Specification CYStech Electronics Corp. .. Spec. No. : C231N3 Issued Date : 2003.04.12 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) 1 VCE(sat) 2 - VCE(sat) 3 - VCE(sat) 4 VBE(sat) 1 VBE(sat) 2 - VBE(sat) 3 VBE(on) h FE 1 h FE 2 - h FE 3 - h FE 4 - h FE 5 f T Cob Min. 350 350 6 20 30 30 20 15 40 Typ. Max. 50 50 0.3 0.35 0.5 1.0 0.75 0.85 0.9 2 200 200 200 6 Unit V V V n A n A V V V V V V V V MHz p F Test Conditions IC=100μA IC=1m A IE=10μA VCB=250V VEB=5V IC=10m A, IB=1m A IC=20m A, IB=2m A IC=30m A, IB=3m A IC=50m A, IB=5m A IC=10m A, IB=1m A IC=20m A, IB=2m A IC=30m A, IB=3m A VCE=10V, IC=100m A VCE=10V, IC=1m A VCE=10V,IC=10m A VCE=10V,IC=30m A VCE=10V,IC=50m A VCE=10V,IC=100m A VCE=20V, IC=10m A, f=20MHz VCB=20V, IE=0A,f=1MHz - Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% CYStek Product Specification CYStech Electronics Corp. .. Spec. No. : C231N3 Issued Date : 2003.04.12 Revised Date : Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 100000 Ssturation Voltage---(m V) VCE=10V Current Gain---HFE...