BTN6517N3 - High Voltage NPN Epitaxial Planar Transistor
Cystech Electonics
Key Features
High Breakdown Voltage:BVCEO≥350V.
Complementary to BTP6520N3
Symbol
BTN6517N3 SOT-23
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current---continuous Power Dissipation @TA=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 350 350 6 500 225 150 -55~+150 Unit V V V mA mW °C °C
BTN6517N3
CYStek Product Specification
CYStech Ele.
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CYStech Electronics Corp.
www.DataSheet4U.com
Spec. No. : C231N3 Issued Date : 2003.04.12 Revised Date : Page No. : 1/4
High Voltage NPN Epitaxial Planar Transistor
BTN6517N3
Features
• High Breakdown Voltage:BVCEO≥350V • Complementary to BTP6520N3
Symbol
BTN6517N3 SOT-23
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current---continuous Power Dissipation @TA=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 350 350 6 500 225 150 -55~+150 Unit V V V mA mW °C °C
BTN6517N3
CYStek Product Specification
CYStech Electronics Corp.
www.DataSheet4U.com
Spec. No. : C231N3 Issued Date : 2003.04.12 Revised Date : Page No.
BTN6517N3 Datasheet
