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MTA7D0N01AV8 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • VGS=3V, ID=5A.
  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package 16V 28A 12.5A 5.9mΩ 6.9mΩ 8.4mΩ Equivalent Circuit MTA7D0N01AV8 Outline Pin 1 DFN3×3 G：Gate D：Drain S：Source Ordering Information Device Package Shipping MTA7D0N01AV8-0-T6-G DFN3×3 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products,.

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Datasheet Details

Part number MTA7D0N01AV8
Manufacturer Cystech Electonics
File Size 358.94 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTA7D0N01AV8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C131V8 Issued Date : 2015.12.14 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTA7D0N01AV8 BVDSS ID @ TC=25°C, VGS=10V ID @ TA=25°C, VGS=10V VGS=10V, ID=11A RDSON(TYP) VGS=4.5V, ID=8A Features VGS=3V, ID=5A • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and halogen-free package 16V 28A 12.5A 5.9mΩ 6.9mΩ 8.