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MTA7D0N01H8 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Repetitive Avalanche Rated.
  • Pb-free lead plating and Halogen-free package RDSON(TYP) VGS=4.5V, ID=8A VGS=3V, ID=5A 16V 37A 13A 5.3mΩ 6.2mΩ 7.7mΩ Symbol MTA7D0N01H8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTA7D0N01H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shippin.

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Datasheet Details

Part number MTA7D0N01H8
Manufacturer Cystech Electonics
File Size 512.03 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTA7D0N01H8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C131H8 Issued Date : 2016.07.19 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTA7D0N01H8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C VGS=10V, ID=11A Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free lead plating and Halogen-free package RDSON(TYP) VGS=4.5V, ID=8A VGS=3V, ID=5A 16V 37A 13A 5.3mΩ 6.2mΩ 7.