MTA7D0N01V8 - N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Key Features

BVDSS ID @ TC=25°C, VGS=10V ID @ TA=25°C, VGS=10V VGS=10V, ID=11A RDSON(TYP) VGS=4.5V, ID=8A VGS=3V, ID=5A.
Single Drive Requirement.
Low On-resistance.
Fast Switching Characteristic.
Pb-free lead plating and halogen-free package 16V 28A 12.5A 6.4mΩ 7.5mΩ 9.0mΩ Equivalent Circuit MTA7D0N01V8 Outline Pin 1 DFN3×3 G：Gate D：Drain S：Source Ordering Information Device Package Shipping MTA7D0N01V8-0-T6-G DFN3×3 3000 pcs / Tape & Reel (Pb-free lead plating and halogen.

MTA7D0N01V8 n-channel enhancement mode power mosfet by Cystech Electonics - Datasheet Preview

Datasheet Details

Part number	MTA7D0N01V8
Manufacturer	Cystech Electonics
File Size	564.73 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTA7D0N01V8 Datasheet

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Full PDF Text Transcription (Reference)

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CYStech Electronics Corp. Spec. No. : C131V8 Issued Date : 2015.06.02 Revised Date : 2015.06.25 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTA7D0N01V8 Features BVDSS ID @ TC=25°C, VGS=10V ID @ TA=25°C, VGS=10V VGS=10V, ID=11A RDSON(TYP) VGS=4.5V, ID=8A VGS=3V, ID=5A  Single Drive Requirement  Low On-resistance  Fast Switching Characteristic  Pb-free lead plating and halogen-free package 16V 28A 12.5A 6.4mΩ 7.5mΩ 9.