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MTE2D4N06F3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple Drive Requirement.
  • Fast Switching Characteristic.
  • RoHS compliant package Symbol MTE2D4N06F3 Outline TO-263 G:Gate D:Drain S:Source G DS Ordering Information Device Package Shipping MTE2D4N06F3-0-T7-X TO-263 (Pb-free lead plating and RoHS compliant package) 800 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T7 : 800 pcs / tape & reel, 13” reel Product rank,.

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Datasheet Details

Part number MTE2D4N06F3
Manufacturer Cystech Electonics
File Size 354.08 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE2D4N06F3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C933F3 Issued Date : 2015.12.11 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTE2D4N06F3 BVDSS ID @VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 60V 60A 3.3mΩ 3.