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MTE2D4N06FP - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Fast Switching Characteristic.
  • RoHS compliant package Symbol MTE2D4N06FP Outline TO-220FP G:Gate D:Drain S:Source GDS Ordering Information Device Package MTE2D4N06FP-0-UB-S TO-220FP (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube,.

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Datasheet Details

Part number MTE2D4N06FP
Manufacturer Cystech Electonics
File Size 425.33 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE2D4N06FP Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C933FP Issued Date : 2015.07.25 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE2D4N06FP BVDSS ID @ VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 60V 60A 3.2mΩ 3.