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MTE2D4N06F7T - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple Drive Requirement.
  • Fast Switching Characteristic.
  • RoHS compliant package BVDSS ID @VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=20A 60V 172A 2.0mΩ Symbol MTE2D4N06F7T Outline TO-263-7L-4C G：Gate D：Drain S：Source Ordering Information Device Package Shipping MTE2D4N06F7T-0-T7-X TO-263-7L-4C (Pb-free lead plating and RoHS compliant package) 800 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green c.

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Datasheet Details

Part number MTE2D4N06F7T
Manufacturer Cystech Electonics
File Size 451.04 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE2D4N06F7T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE2D4N06F7T Spec. No. : C933F7T Issued Date : 2016.12.30 Revised Date : 2017.01.03 Page No. : 1/9 Features • Simple Drive Requirement • Fast Switching Characteristic • RoHS compliant package BVDSS ID @VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=20A 60V 172A 2.