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DMN12M3UCA6 - N-CHANNEL MOSFET

Description

This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features

  • CSP with Footprint 3.05mm × 1.77mm.
  • Height = 0.11mm for Low Profile.
  • ESD Protection of Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Full PDF Text Transcription

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DMN12M3UCA6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVSSS 14.5V RSS(ON) Typ 2.36mΩ @ VGS = 3.8V IS Max TA = +25°C 24.4A Description This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features  CSP with Footprint 3.05mm × 1.77mm  Height = 0.11mm for Low Profile  ESD Protection of Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.
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