DMN1250UFEL Description
Features Low Gate Charge RDS(ON): 280mΩ @ VGS = 4.5V (Single MOSFET) 8 N-Channel MOSFET in 1 Device mon Source Small Footprint 1.5mm × 1.5mm Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability DMN1250UFEL N-CHANNEL ENHANCEMENT MODE MOSFET Case:.
DMN1250UFEL Key Features
- Low Gate Charge
- RDS(ON): 280mΩ @ VGS = 4.5V (Single MOSFET)
- 8 N-Channel MOSFET in 1 Device
- mon Source
- Small Footprint 1.5mm × 1.5mm
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
- Case: U-QFN1515-12
- Case Material