DMN2990UDJQ
Description
and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Key Features
- Dual N-Channel MOSFET
- Low On-Resistance
- Very Low Gate Threshold Voltage, 1.0V Max
- Low Input Capacitance
- Fast Switching Speed
- Ultra-Small Surface Mount Package 1mm x 1mm
- Low Package Profile, 0.45mm Maximum Package Height
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS pliant (Notes 1 &
- Halogen and Antimony Free. “Green” Device (Note
