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DMN2990UDJ
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 20V
RDS(ON) Max
0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V 1.8Ω @ VGS = 1.8V 2.4Ω @ VGS = 1.5V
ID Max TA = 25°C
450mA 400mA 330mA 300mA
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
General Purpose Interfacing Switch Power Management Functions DC-DC Converters Analog Switch
SOT963
Features
Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.0V Max Low Input Capacitance Fast Switching Speed Ultra-Small Surface Mount Package 1mm x 1mm Low Package Profile, 0.