DMN2990UFZ Datasheet (PDF) Download
Diodes Incorporated
DMN2990UFZ

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Key Features

  • Low Package Profile, 0.42mm Maximum Package Height
  • 0.62mm x 0.62mm Package Footprint
  • Low On-Resistance
  • Very Low Gate Threshold Voltage, 1.0V Max
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS pliant (Notes 1 &
  • Halogen and Antimony Free. “Green” Device (Note
  • Qualified to AEC-Q101 standards for High Reliability Mechanical Data
  • Case: X2-DFN0606-3
  • Case Material: Molded Plastic, “Green” Molding pound. UL Flammability Classification Rating 94V-0