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DMN2990UFZ - N-Channel MOSFET

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

General Purpose Interfacing Switch Power Management Functions Analog S

Features

  • Low Package Profile, 0.42mm Maximum Package Height.
  • 0.62mm x 0.62mm Package Footprint.
  • Low On-Resistance.
  • Very Low Gate Threshold Voltage, 1.0V Max.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 standards for High Reliability Mechanical Data.
  • Case: X2-DFN0606-3.
  • Case Material: Molded Plastic, “Green” Mol.

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Datasheet Details

Part number DMN2990UFZ
Manufacturer DIODES
File Size 245.89 KB
Description N-Channel MOSFET
Datasheet download datasheet DMN2990UFZ Datasheet
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Full PDF Text Transcription

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A D VNA EN CWEPDRNIOENDFWUOPCRRTMOADTUI COTN DMN2990UFZ 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) max 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V 1.8Ω @ VGS = 1.8V 2.4Ω @ VGS = 1.5V ID max TA = +25°C 250mA 230mA 180mA 150mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications • General Purpose Interfacing Switch • Power Management Functions • Analog Switch Features and Benefits • Low Package Profile, 0.42mm Maximum Package Height • 0.62mm x 0.62mm Package Footprint • Low On-Resistance • Very Low Gate Threshold Voltage, 1.
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