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DMN2991UDJ - DUAL N-CHANNEL MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Key Features

  • Dual N-Channel MOSFET.
  • Low On-Resistance.
  • Very Low Gate Threshold Voltage, 1.0V Max.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Ultra-Small Surface Mount Package 1mm x 1mm.
  • Low Package Profile, 0.45mm Maximum Package Height.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A D V A N C E DNIEN FWOPRRMOADT IU COTN DMN2991UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V 1.8Ω @ VGS = 1.8V 2.4Ω @ VGS = 1.5V ID Max TA = +25°C 520mA 470mA 385mA 330mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features  Dual N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance  Fast Switching Speed  Ultra-Small Surface Mount Package 1mm x 1mm  Low Package Profile, 0.45mm Maximum Package Height  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.