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DMN2991UFZQ - 20V N-CHANNEL ENHANCEMENT MODE MOSFET

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

General-purpose interfacing switches Power-management functions Analog switches X2-DFN0

Features

  • Low Package Profile, 0.42mm Maximum Package Height.
  • 0.62mm × 0.62mm Package Footprint.
  • Low On-Resistance.
  • Very Low Gate Threshold Voltage, 1.0V Maximum.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • The DMN2991UFZQ is suitable for automotive.

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Datasheet preview – DMN2991UFZQ

Datasheet Details

Part number DMN2991UFZQ
Manufacturer DIODES
File Size 736.64 KB
Description 20V N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DMN2991UFZQ Datasheet
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Full PDF Text Transcription

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DMN2991UFZQ 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V 1.8Ω @ VGS = 1.8V 2.4Ω @ VGS = 1.5V ID Max TA = +25°C 0.55A 0.50A 0.41A 0.35A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Applications  General-purpose interfacing switches  Power-management functions  Analog switches X2-DFN0606-3 Features and Benefits  Low Package Profile, 0.42mm Maximum Package Height  0.62mm × 0.62mm Package Footprint  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Maximum  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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