• Part: DMN2991UDR4
  • Description: DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
  • Category: MOSFET
  • Manufacturer: Diodes Incorporated
  • Size: 358.31 KB
Download DMN2991UDR4 Datasheet PDF
Diodes Incorporated
DMN2991UDR4
Features - Low On-Resistance - Low Input/Output Leakage - Fast Switching Speed - ESD Protected Gate - Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://.diodes./quality/product-definitions/ Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. - Power-management functions - Backlighting - Load switches Mechanical Data - Package: X2-DFN1010-6 - Package Material: Molded Plastic, “Green” Molding pound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminal Connections: See Diagram...