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DMN2991UDR4 - DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Power-management functions Backlighting Load switches M

Features

  • Low On-Resistance.
  • Low Input/Output Leakage.
  • Fast Switching Speed.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Datasheet preview – DMN2991UDR4

Datasheet Details

Part number DMN2991UDR4
Manufacturer DIODES
File Size 358.31 KB
Description DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DMN2991UDR4 Datasheet
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Full PDF Text Transcription

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Product Summary BVDSS 20V RDS(ON) 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V 1.8Ω @ VGS = 1.8V 2.4Ω @ VGS = 1.5V ID TA = +25°C 0.5A 0.45A 0.37A 0.32A DMN2991UDR4 DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • Low Input/Output Leakage • Fast Switching Speed • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.
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