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DMN2991UV
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 20V
RDS(ON) 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V
ID @TA = +25°C 0.7A 0.6A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Features and Benefits
• Low On-Resistance • Low Gate Threshold Voltage VGS(TH) < 1V • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface-Mount Package • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change control
(i.e.