DMN32D0LV Datasheet | Diodes Incorporated

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 30V RDS(ON) 1.2Ω @ VGS = 4.5V 1.5Ω @ VGS = 2.5V ID TA = +25°C 0.68A 0.61A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits - Dual N-Channel MOSFET - Low On-Resistance - Very Low Gate Threshold Voltage - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - Ultra-Small Surface Mount Package - Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device...