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DMT10H009SCG - 100V N-CHANNEL MOSFET

General Description

This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance.

This device is ideal for use in notebook battery power management and load switch.

Backlighting Power Management Functions DC-DC Conve

Key Features

  • 100% Unclamped Inductive Switch (UIS) Test in Production.
  • High Conversion Efficiency.
  • Low RDS(ON).
  • Minimizes On State Losses.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMT10H009SCG 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 9.5mΩ @ VGS = 10V ID TC = +25°C 48A Description and Applications This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.  Backlighting  Power Management Functions  DC-DC Converters Features and Benefits  100% Unclamped Inductive Switch (UIS) Test in Production  High Conversion Efficiency  Low RDS(ON) – Minimizes On State Losses  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.