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DMT10H009LSS - 100V N-CHANNEL MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

High Frequency Switching Synchronous Rectification DC-DC Converters

Key Features

  • High Conversion Efficiency.
  • Low RDS(ON).
  • Minimizes On-State Losses.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMT10H009LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 9mΩ @ VGS = 10V 13.8mΩ @ VGS = 4.5V ID Max TA = +25°C 13A 10A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.  High Frequency Switching  Synchronous Rectification  DC-DC Converters Features and Benefits  High Conversion Efficiency  Low RDS(ON)—Minimizes On-State Losses  Low Input Capacitance  Fast Switching Speed  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.