DMT10H009LPS
Description
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance.
Key Features
- BVDSS 100V RDS(ON) Max 8mΩ @ VGS = 10V 12.5mΩ @ VGS = 4.5V ID Max TC = +25°C 90A 74A
