Download DMT10H009LCG Datasheet PDF
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DMT10H009LCG Description

and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.  Backlighting  Power Management Functions  DC-DC Converters.

DMT10H009LCG Key Features

  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • High Conversion Efficiency
  • Low RDS(ON)
  • Minimizes On State Losses
  • Low Input Capacitance
  • Fast Switching Speed
  • Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Case: V-DFN3333-8 (Type B)
  • Case Material: Molded Plastic, "Green" Molding pound