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DMT10H009LK3 - 100V N-Channel MOSFET

General Description

This new generation MOSFET

Key Features

  • low on-resistance and fast switching, making it ideal for high efficiency power management.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green DMT10H009LK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 9mΩ @ VGS = 10V 13mΩ @ VGS = 4.5V ID Max TC = +25°C 90A 76A Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Applications  Power Management Functions  DC-DC Converters  Backlighting Features  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  Low RDS(ON) – Minimizes Power Losses  Low Qg – Minimizes Switching Losses  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.