DMT10H025LK3 - 100V N-CHANNEL MOSFET

Description

This new generation MOSFET

Features

100% Unclamped Inductive Switching.
Ensures More Reliable and Robust End.

DIODES

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Datasheet Details

Part number	DMT10H025LK3
Manufacturer	DIODES
File Size	484.24 KB
Description	100V N-CHANNEL MOSFET
Datasheet	DMT10H025LK3 Datasheet
Additional preview pages of the DMT10H025LK3 datasheet.

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Product Summary BVDSS 100V RDS(ON) Max 22mΩ @ VGS = 10V 30mΩ @ VGS = 6.0V 43.7mΩ @ VGS = 4.5V Green DMT10H025LK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET ID TC = +25°C 47.2A 40.4A 33.5A Features  100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application  Low RDS(ON) – Minimizes Power Losses  Low QG – Minimizes Switching Losses  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Published: May 10, 2023 |