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DMT10H025LSS Datasheet 100v N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: DMT10H025LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 25mΩ @ VGS = 10V 33mΩ @ VGS = 6V 45mΩ @ VGS = 4.5V ID max TA = +25°C 7.1A 6.2A 5.

General Description

and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

 High Frequency Switching  Synchronous Rectification  DC-DC Converters SO-8 S Mechanical Data  Case: SO-8  Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 3 per J-STD-020  Terminal Finish – Matte Tin Annealed over Copper Leadframe.

Key Features

  • 100% Unclamped Inductive Switching.
  • Ensures More Reliable and Robust End.

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