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DMT10H025LSS - 100V N-CHANNEL MOSFET

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

High Frequency Switching Synchronous Rectification DC-DC Converters SO-8 S Mec

Features

  • 100% Unclamped Inductive Switching.
  • Ensures More Reliable and Robust End.

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Datasheet preview – DMT10H025LSS

Datasheet Details

Part number DMT10H025LSS
Manufacturer DIODES
File Size 450.76 KB
Description 100V N-CHANNEL MOSFET
Datasheet download datasheet DMT10H025LSS Datasheet
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Full PDF Text Transcription

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DMT10H025LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 25mΩ @ VGS = 10V 33mΩ @ VGS = 6V 45mΩ @ VGS = 4.5V ID max TA = +25°C 7.1A 6.2A 5.3A Features and Benefits  100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application  High Conversion Efficiency  Low RDS(ON) – Minimizes On-State Losses  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.
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